S9012 TO-92 PNP Bipolar Transistors – BJT
1.00 EGP
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SKU:ect-919
S9012 Key Features
- High total power dissipation. (PT=625mW)
- High Collector Current. (IC= -500mA)
Characteristics of S9012 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -25 V
- Collector-Base Voltage, max: -40 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 64 to 300
- Transition Frequency, min: 150 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
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