Features :
Type Designator: 2SC3261
Material of Transistor: Si
– Polarity: NPN
– Maximum Collector Power Dissipation Pc: 50 W
– Maximum Collector-Base Voltage |Vcb|: 800 V
– Maximum Collector-Emitter Voltage |Vce|: 800 V
– Maximum Emitter-Base Voltage |Veb|: 7 V
– Maximum Collector Current |Ic max|: 3 A
– Max. Operating Junction Temperature Tj: 125 °C
– Forward Current Transfer Ratio hFE, MIN: 10
– Noise Figure, dB: –
– Package: X104
