This is Silicon NPN Triple Diffused Type Transistor (PCT process).
Features
1. Excellent switching times: tr= 0.7 μs (max), tf= 0.5 μs (max)
2. High collectors breakdown voltage: VCEO= 800 V
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 900 V
2. Collector to Emitter Voltage: Vceo = 800 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 3A
5. Total Dissipation : Pc = 2.0 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications
1. Switching Regulator and High Voltage Switching
2. High-Speed DC-DC Converter
