Features :
Type Designator: 70N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 79 nS
Drain-Source Capacitance (Cd): 530 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO-220 TO-263 TO-262
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 79 nS
Drain-Source Capacitance (Cd): 530 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO-220 TO-263 TO-262