IRFZ40 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFZ40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 50 nC
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 630 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
Package: TO220
IRFZ40 Transistor Equivalent Substitute – MOSFET Cross-Reference Search
IRFZ40 Datasheet (PDF)
..1. irfz40.pdf 
Size:181K _international_rectifier
