This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits
BUZ11 Pin Configuration
| Pin No | Pin Name |
|---|---|
| 1 | Gate |
| 2 | Drain |
| 3 | Source |
BUZ11 Key Features
- Typical RDS(on) = 0.03 Ω
- Avalanche Rugged Technology
- 100% Avalanche Tested
- High Current Capability
- 175 C Operating Temperature
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
| Id (mA) | Pd | Vds (max) | Vgs | Rds | cd |
|---|---|---|---|---|---|
| 36 | 120 | 50 | 20 | 0.04 | 1500pF |
- BUZ100L, BUZ100S, BUZ100SL-4, BUZ101, BUZ101L, BUZ101S
Application
- Switching Regulators
- Switching Converters
- Motor Drivers
- Relay Drivers
You can download this datasheet for BUZ11 33A 50V N-Channel Power MOSFET from the link given below:
