Features :
Type Designator: 2SB817
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7.5 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: –
Package: TO220
