BD649 NPN Bipolar Transistors – BJT (100V 8A 62.5W) TO-220
15.00 EGP
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Availability:
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SKU:ect-958
Specifications:
- Type Designator: BD649
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 62.5 W
- Maximum Collector-Base Voltage |Vcb|: 120 V
- Maximum Collector-Emitter Voltage |Vce|: 100 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 8 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Forward Current Transfer Ratio (hFE), MIN: 750
- Package: TO-220
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