Home
Shop
Wishlist0

C5198 Bipolar Transistors – BJT NPN TO-3P

25.00 EGP

Buy Now Compare
Availability: In Stock
SKU:ect-964
C5198 Transistor
C5198 transistor electrical specification
  • 2SC5198 is an NPN bipolar junction transistor device
  • Collector to emitter voltage is 140V
  • Collector to base voltage is 140V
  • Emitter to base voltage is 5V
  • Collector current is 10A
  • Base current is 1A
  • Power dissipation is 100W
  • DC current gain is 35 to 160hFE
  • Current gain-bandwidth (FT) is 30MHz
  • Junction temperature is between -55 to 150℃
  • Collector to emitter saturation voltage (VCE (SAT)) is3 to 2V
  • High breakdown voltage
  • NPN triple diffused type transistor
C5198 transistor Pinout
C5198 transistor Pinout
Pin Number Pin Name Description
1 Base The base terminal is the trigger for the transistor
2 Collector The collector terminal will act as the output of the trigger
3 Emitter The emitter acts as the input for the transistor
C5198 transistor package

The C5198 transistor device has TO-3P packages, it is a 3pin transistor package used for power amplifier applications.

TO-3P package is a through-hole bulkier package mainly used for POWER semiconductor devices, the heat resistance of the package is the main advantage, plastic and epoxy materials are used to make the body of the TO-3P package.

The backside of the TO-3P package is covered with metal, this covering will act as the heat sink and they transfer the heat towards the heat sink.

C5198 transistor explanation for electrical specification and application

In this section we try to explain the electrical characteristics of the C5198 transistor, this explanation will help us to know more about this transistor.

Voltage specs

The terminal voltage specs of the C5198 transistor are collector to base and collector to emitter voltage value is 140V and emitter to base voltage is 5V, the voltage specs of the transistor shown that these transistors are good at POWER amplifiers.

The collector to emitter saturation voltage value is 0.3V to 2V, it is the region switching speed of the transistor.

The voltage specifications of the C5198 transistor are higher, this is why these transistors are used in POWER amplifier applications.

Current specs

The collector current value is 10A, and the current value of a transistor shows the maximum load capacity of the transistor.

The current value shows that the C5198 transistor is capable of switching applications.

Dissipation specs

The power dissipation value of the C5198 transistor is 100W, it is the dissipation capacity of the transistor.

Current gain specs

The current gain value of the C5198 transistor is 33 to 160hFE, it is the amplification capacity of a transistor device.

Transition frequency

The bandwidth transition frequency value of the C5198 transistor is 30MHz, this transistor had a low-frequency range.

Junction temperature

The junction temperature is -55 to 150℃ for the transistor, it is the capacity of the device at the temperature change.

2SC5198/C5198 Transistor
Datasheet
Back to Top
Product has been added to your cart