IRF9620PBF
The HEXFET technology is the key to the international Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contributes to its wide acceptance throughout the industry.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Dynamic dv/dt rating
- P-Channel
- fast switching
- Ease of Paralleling
- Simple drive requirements
Detailed Specifications
| Attribute | Value |
| Drain Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) | 3.5A |
| Power Dissipation (Pd) | 40W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.5Ω@10V,1.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | P Channel |
| Input Capacitance (Ciss@Vds) | 350pF@25V |
| Total Gate Charge (Qg@Vgs) | 22nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
