K2362 500V, 10A, 100W N-Channel Power MOSFET Transistor TO-3PN

Specifications:

• Type Designator: 2SK2362
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 100 W
• Maximum Drain-Source Voltage |Vds|: 500 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Drain Current |Id|: 10 A
• Maximum Junction Temperature (Tj): 150 °C
• Rise Time (tr): 24 nS
• Drain-Source Capacitance (Cd): 200 pF
• Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

2SK2362 Datasheet