Characteristics of the TIP35C bipolar transistor
- Type – NPN
- Collector-Emitter Voltage: 100 V
- Collector-Base Voltage: 100 V
- Emitter-Base Voltage: 5 V
- Collector Current: 25 A
- Collector Dissipation – 125 W
- DC Current Gain (hfe) – 15 to 75
- Transition Frequency – 3 MHz
- Operating and Storage Junction Temperature Range -65 to +150 °C
- Package – TO-247